Bipolar conduction and drain-induced barrier thinning in carbon nanotube FETs
نویسندگان
چکیده
منابع مشابه
BIPOLAR CONDUCTION and DRAIN-INDUCED BARRIER THINNING in CARBON NANOTUBE FETs
The drain current-voltage (I-V) characteristics of Schottky-barrier carbon nanotube FETs are computed via a self-consistent solution to the 2-D potential profile, the electron and hole charges in the nanotube, and the electron and hole currents. These out-of-equilibrium results are obtained by allowing splitting of both the electron and hole quasi-Fermi levels to occur at the source and drain c...
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ژورنال
عنوان ژورنال: IEEE Transactions On Nanotechnology
سال: 2003
ISSN: 1536-125X
DOI: 10.1109/tnano.2003.817527